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Enhanced and controlled light absorption as well as field confinement in an optically thin material are pivotal for energy-efficient optoelectronics and nonlinear optical devices. Highly doped transparent conducting oxide (TCO) thin films with near-zero permittivity can support ENZ modes in the so-called epsilon near zero (ENZ) frequency region, which can lead to perfect light absorption and ultra-strong electric field intensity enhancement (FIE) within the films. To achieve full control over absorption and FIE, one must be able to tune the ENZ material properties as well as the film thickness. Here, we experimentally demonstrate engineered absorption and FIE in aluminum doped zinc oxide (AZO) thin films via control of their ENZ wavelengths, optical losses, and film thicknesses, tuned by adjusting the atomic layer deposition (ALD) parameters such as dopant ratio, deposition temperature, and number of macro-cycles. We also demonstrate that under ENZ mode excitation, though the absorption and FIE are inherently related, the film thickness required for observing maximum absorption differs significantly from that for maximum FIE. This study on engineering ENZ material properties by optimizing the ALD process will be beneficial for the design and development of next- generation tunable photonic devices based on flat, zero-index optics.